Antifuse with improved antifuse material
US5592016A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Apr 14, 1995 |
| Grant date | Jan 7, 1997 |
| Priority date | — |
| Expiry date | Apr 14, 2015 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/3011
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An antifuse comprises first and second electrodes separated by an antifuse material having a thickness selected to impart a desired target programming voltage to the antifuse. The antifuse material comprises a solid material stable at temperatures below about 600.degree. C., having a defect density less than about 100 defects/cm.sup.2, a breakdown field less than about 10 megavolts/cm, a dielectric constant lower than about 4.0, a resistivity of greater than about 10.sup.4 ohm-cm. The antifuse material may comprise organic materials such as polyimides compatible with high-temperature processes including cured polyamic acids, pre-imidazed polymers, photo-sensitive polyimides, and other polimides such as pyralin, probimide, PIQ, etc. The antifuse materials of the present invention also include fluorinated polymers having very low dielectric constants, such as teflon, paralines, polyphenylquinoxaline, benzocyclobutene polymers, and perfluoropolymers.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.