Method of making photodiodes for low dark current operation having geometric enhancement
US5593902A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | May 23, 1994 |
| Grant date | Jan 14, 1997 |
| Priority date | — |
| Expiry date | May 23, 2014 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/965
Abstract
A substantial portion of the material at the pn junction (27) of the photodiode (37, 41) having an implanted region extending to a surface thereof is selectively removed (39), leaving a very small junction region (35, 43) with the remainder of the p-type (23) and n-type (25) material of each photodiode being spaced apart or electrically isolated at what was originally the junction. In the ion implanted n-type on p-type approach, the majority of the signal is created in the implanted n-type region while the majority of the noise is generated in the p-type region. By selectively removing p-type material, n-type material or both from the pn junction of the diode or otherwise electrically isolating most of the p-type and n-type regions from each other at the pn junction and thereby minimizing the pn junction area, noise is greatly reduced without affecting the signal response of the photodiode. With this approach, the present implant technology can still be used with the achievement of high temperature operational capability above 77.degree. Kelvin and up to about 110.degree. Kelvin.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.