Method of manufacturing solid state imaging device having high sensitivity and exhibiting high degree of light utilization
US5593913A · kind A · utility
Assignee
Inventor
Key dates
| Filing date | May 24, 1995 |
| Grant date | Jan 14, 1997 |
| Priority date | — |
| Expiry date | May 24, 2015 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F39/18
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
There are provided a solid state imaging device having high sensitivity and exhibiting high degree of light utilization and a method of manufacturing the same. An insulating film 42, a transfer electrode 43, a light shielding film 44, a protective film 45, and a flat layer 51 are formed above a layer having a photoelectric conversion portion, and a concave lens layer 52 is formed on the flat layer 51 to a lattice pattern. The concave lens layer 52 of the lattice pattern is hot melted for conversion into a concave type micro-lens 52. A resin layer 53 having a refractive index smaller than that of the concave lens 52, a buffer layer 54, and a convex type micro-lens 57 are sequentially formed above the concave type micro-lens 52. The concave type micro-lens 52 functions to bring light rays focused by the convex type micro-lens 57 to a position close to light incident vertically upon the photoelectric conversion portion 41.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.