Semiconductor memory device having thin film transistor and method of producing the same
US5594267A · kind A · utility
6Cited by
4References
10Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jan 4, 1994 |
| Grant date | Jan 14, 1997 |
| Priority date | — |
| Expiry date | Jan 4, 2014 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B10/125
Abstract
A semiconductor memory device includes a semiconductor substrate, and a memory cell formed on the semiconductor substrate and including two transfer transistors, two driver transistors and two thin film transistor loads. The thin film transistor load includes a first gate electrode, a first insulator layer formed on the first gate electrode, a semiconductor layer formed on the first insulator layer, a second insulator layer formed on the semiconductor layer, and a shield electrode formed on the second insulator layer. This shield electrode shields the thin film transistor.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.