Magnetoresistance film which is a matrix of at least two specified metals having included submicron particles of a specified magnetic metal or alloy
US5594933A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Jun 30, 1995 |
| Grant date | Jan 14, 1997 |
| Priority date | — |
| Expiry date | Jun 30, 2015 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T428/12465
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
The invention relates to a magnetoresistance material, i.e. a conductive material that exhibits magnetoresistance, which is an inhomogeneous system consisting of a nonmagnetic matrix and ultrafine particles of a ferromagnetic material such as Co or Ni--Fe--Co dispersed in the nonmagnetic matrix. With the aim of reducing deterioration of the magnetoresistance effect, an alloy or mixture of at least two metal elements selected from Cu, Ag, Au and Pt is used as the material of the nonmagnetic matrix. Optionally, the nonmagnetic matrix may contain a limited quantity of a supplementary element selected from Al, Cr, In, Mn, Mo, Nb, Pd, Ta, Ti, W, V, Zr and Ir. A film of the magnetoresistance material can be formed on a substrate, and it is optional to interpose a buffer layer between the film and the substrate and/or cover the film with a protective layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.