Process for producing a crystalline silicon nitride powder
US5595718A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Jun 20, 1995 |
| Grant date | Jan 21, 1997 |
| Priority date | — |
| Expiry date | Jun 20, 2015 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC01P2006/12
- WIPO fieldMaterials, metallurgy
- WIPO sectorChemistry
Abstract
A crystalline silicon nitride powder having a high specific surface area and an enhanced sintering property is produced with a high producibility and a large scale, by calcining a silane material comprising at least one nitrogen-containing silane compound in a nitrogen-containing inert gas mixed with 0.1 to 5%, based on the total volume of the mixed gas, of molecular oxygen, preferably at 600.degree. to 1200.degree. C.; baking the resultant amorphous silicon nitride powder in a nitrogen-containing inert gas preferably at 1400.degree. to 1700.degree. C.; and milling the resultant crystalline silicon nitride powder in a mixed gas atmosphere comprising 5 to 40% by volume of molecular oxygen and the balance consisting of an inert gas preferably at 0.degree. to 100.degree. C.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.