Article comprising an organic thin film transistor
US5596208A · kind A · utility
73Cited by
6References
15Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | May 10, 1996 |
| Grant date | Jan 21, 1997 |
| Priority date | — |
| Expiry date | May 10, 2016 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10K85/655
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
Articles according to the invention comprise an improved organic thin film transistor (TFT) that can have substantially higher source/drain current on/off ratio than conventional organic TFTs. An exemplary TFT according to the invention comprises, in addition to a p-type first organic material layer (e.g., .alpha.-6T), an n-type second organic material layer (e.g., Alq) in contact with the first material layer. TFTs according to the invention can be advantageously used in, for instance, active liquid crystal displays and electronic memories.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.