Thermal sensor/actuator in semiconductor material
US5596219A · kind A · utility
37Cited by
1References
12Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | May 16, 1995 |
| Grant date | Jan 21, 1997 |
| Priority date | — |
| Expiry date | May 16, 2015 |
Classification
- Technology area (CPC B)Performing Operations; Transporting
- CPC primaryB81C2203/0735
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
Semiconductor component with monolithically integrated electronic circuits and monolithically integrated sensor/acutator, whereby the sensor/actuator is manufactured with methods of surface micromachining in a sensor layer (3) of polysilicon that is structured, for example, with sensor webs (6), and these sensor webs (6) are thermally insulated from a silicon substrate (1) by a cavity (4) that is produced in a sacrificial layer (2) and is closed gas-tight toward the outside with a closure layer (5).
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.