Vacuum microelectronic device and methodology for fabricating same
US5598052A · kind A · utility
4Cited by
8References
11Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Dec 16, 1994 |
| Grant date | Jan 28, 1997 |
| Priority date | — |
| Expiry date | Dec 16, 2014 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S3/0973
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A vacuum state microelectronic device comprising at least a cathode, an anode, and a grid, disposed in a cavity, and formed by the wafer bonding of two planar substrates. The technology permits multiple vacuum state microelectronic devices (vacuum tubes) to be arrayed on a single substrate in an integrated manner. So as to form a bond as strong as the substrate itself.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.