Method for making semiconductor device with metal deposited on electron donating surface of gate electrode
US5599741A · kind A · utility
22Cited by
14References
8Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jun 7, 1995 |
| Grant date | Feb 4, 1997 |
| Priority date | — |
| Expiry date | Jun 7, 2015 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/662
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device including a field effect transistor has source and drain areas formed on the main surface of a semiconductor substrate and a gate electrode formed on the main surface across a gate insulation film. The gate electrode has a first electrode portion with an electron donating surface and a second electrode portion consisting of metal formed on the first electrode portion.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.