Method of manufacturing a semiconductor device
US5599743A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Apr 7, 1995 |
| Grant date | Feb 4, 1997 |
| Priority date | — |
| Expiry date | Apr 7, 2015 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/963
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A manufacturing method of a semiconductor device including the steps of forming an insulating film on a semiconductor substrate, further laminating an aluminum film or an alloy film primarily containing aluminum, forming a mask having a certain pattern on the aluminum film or the alloy film primarily comprising aluminum, removing the aluminum film or the alloy film primarily comprising aluminum by etching the film by chlorination and/or bromination with plasma except the part on which the mask is formed, exposing the film to a gas plasma not liable to deposit or oxidize but capable of substituting fluoride for chloride and/or bromide, or to a gas mixture plasma comprising hydrogen and the above-mentioned gas, washing with water, and removing the mask to provide a manufacturing method of a semiconductor devices which can prevent the occurence of defective goods caused by the corrosion of interconnections comprising an aluminum film, or an alloy film primarily comprising aluminum, reduce manufacturing cost, improve the yield rate and reliability of the semiconductor device.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.