Light receiving device with isolation regions
US5602415A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Jun 2, 1995 |
| Grant date | Feb 11, 1997 |
| Priority date | — |
| Expiry date | Jun 2, 2015 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F39/103
Abstract
A light receiving device including a semiconductor substrate of a first conductivity type; a first semiconductor layer of a second conductivity type which is formed on the semiconductor substrate of the first conductivity type; and a semiconductor layer of the first conductivity type which elongates from a surface of the first semiconductor substrate of the second conductivity type to reach a surface of the semiconductor substrate of the first conductivity type, the semiconductor layer splitting the first semiconductor layer of the second conductivity type into a plurality of semiconductor regions of the second conductivity type. The portion of the semiconductor layer of the first conductivity type which overlaps with the semiconductor substrate of the first conductivity type is formed as a semiconductor region of the first conductivity type and has a high-impurity density. The semiconductor regions of the second conductivity type, and semiconductor substrate of the first conductivity type below such regions form a plurality of light detecting photodiode portions for detecting signal light. The device further includes a second semiconductor layer of the second conductivity type bei…
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.