Nitride based semiconductor device and manufacture thereof
US5602418A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Sep 22, 1994 |
| Grant date | Feb 11, 1997 |
| Priority date | — |
| Expiry date | Sep 22, 2014 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02P70/50
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A nitride semiconductor device is made using a molecular beam epitaxy growth apparatus having a gas source for supplying a compound including gaseous nitrogen, solid body sources for supplying Group III constituents, and sources for supplying n-type and p-type dopants. A gaseous state compound containing nitrogen, and a Group III constituent is supplied to the surface of a substrate, wherein the substrate is at a temperature of 300.degree. to 1000.degree. C. and is under a pressure of less than 10.sup.-5 Torr, to produce a first layer of oriented polycrystalline nitride semiconductor on the substrate at a growth rate of 0.1 to 20 Angstroms/second. Subsequently, a gaseous state compound containing nitrogen and a Group III constituent is supplied to the surface of the first layer of the substrate to produce a single crystal nitride semiconductor layer on the first layer at a growth rate of 0.1 to 10 Angstroms/second. The resultant nitride semiconductor device comprises a substrate, a first layer of an oriented polycrystalline nitride semiconductor of less than 5000 Angstroms thickness and disposed directly on the substrate, an operating layer of a single crystal nitride semiconductor…
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.