Switch potential electron beam substrate tester
US5602489A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Dec 2, 1994 |
| Grant date | Feb 11, 1997 |
| Priority date | — |
| Expiry date | Dec 2, 2014 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG01R31/307
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
The present invention describes a method for testing the interconnect networks of a multichip module for opens and shorts. An electron beam lands on a pad of an interconnect network located on a substrate. The electron beam is used to interrogate the pad. An extract grid located above the substrate is maintained at a positive potential. While the electron beam interrogates the pad, the pad emits secondary electrons until such a point that the pad reaches a positive potential near that of the positive potential of the extract grid. The extract grid is then switched to a negative potential. The pad, still being interrogated by the electron beam, then collects secondary electrons until such a point that the pad reaches a negative potential near that of the negative potential of the extract grid. The test time, the length of time it takes for the pad to change from the positive potential to the negative potential, is measured and compared to a reference value. From this comparison it can be determined whether the interconnect network is defect-free, open, or shorted. If the test time is approximately equal to the reference value then the interconnect network is defect-free. If the test…
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.