Gate drive circuit
US5602505A · kind A · utility
Assignee
Inventor
Key dates
| Filing date | Feb 20, 1996 |
| Grant date | Feb 11, 1997 |
| Priority date | — |
| Expiry date | Feb 20, 2016 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH03K17/063
- WIPO fieldBasic communication processes
- WIPO sectorElectrical engineering
Abstract
In one aspect of the present invention a gate drive circuit is disclosed. The gate drive circuit includes a high voltage and low voltage energy source, a power transistor, a switching transistor, and a charging capacitor. The charging capacitor stores energy from the low voltage energy source. The gate drive circuit further includes a circuit that biases the switching transistor OFF which causes the low voltage energy stored in the capacitor to bias the power transistor ON to transfer high voltage energy to the load. The circuit additionally biases the switching transistor ON which biases the power transistor OFF to block the transfer of high voltage energy. Finally, a protection device is included to limit the power transistor voltage to a maximum voltage level in response to the power transistor being biased ON.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.