Non-Volatile, static random access memory with current limiting
US5602776A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Oct 27, 1995 |
| Grant date | Feb 11, 1997 |
| Priority date | — |
| Expiry date | Oct 27, 2015 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C14/0063
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
The present invention provides a non-volatile, static random access memory (nvSRAM) cell with a current limiting feature that prevents current that is provided to the cell or array of cells during a recall operation in which information is transferred from the non-volatile portion of the cell or array to the static random access memory portion of the cell or array from reaching a point that would be detrimental to the cell or array. The current limiting device is located between the nvSRAM cell or array of cells and ground. In one embodiment, the current limiting device includes a variable resistance and a device for modulating the resistance so that the resistance is high at the beginning of a recall operation and decreases thereafter.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.