Process and apparatus for the production of films of oxide type single crystal
US5603762A · kind A · utility
4Cited by
3References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | May 16, 1995 |
| Grant date | Feb 18, 1997 |
| Priority date | — |
| Expiry date | May 16, 2015 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC30B29/30
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A process is disclosed for producing a film of an oxide type single crystal on a substrate of such an oxide type single crystal by epitaxially growing the oxide type single crystal on the substrate through contacting the substrate onto a melt in an overcooled state. The substrate of the oxide type single crystal is contacted with the melt held in a first furnace, and the substrate of the oxide type single crystal is held inside a second furnace separated from said first furnace, and the temperature of the substrate is adjusted in the second furnace. An oxide type single crystal film-producing apparatus is also disclosed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.