Mask structure having phase shifting pattern suitable for forming fine pattern on photosensitive film and method of manufacturing solid-state devices using such mask structure
US5604059A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Aug 15, 1994 |
| Grant date | Feb 18, 1997 |
| Priority date | — |
| Expiry date | Aug 15, 2014 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F7/2002
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A mask structure has two (or more) groups of device patterns formed on one transparent support plate. Each of the device patterns has a transparent partial pattern. One or both of the groups of device patterns are provided with phase shifting patterns for improvement of the resolution in the lithography. The transparent partial pattern in each of the device patterns in each of the device pattern groups is determined such that each of the transparent partial patterns held by one of the device pattern groups is adapted for combination with one transparent partial pattern held by the other device pattern group by two or more times of transmission of an exposure beam through the mask structure. Manufacturing of solid-state devices is possible by use of the mask structure, in which exposure of a photo-sensitive film on a substrate to an exposure beam through the mask structure is repeated two or more times with a relative position between the mask structure and the substrate being changed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.