Semiconductor device and manufacturing method thereof
US5604374A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Mar 7, 1995 |
| Grant date | Feb 18, 1997 |
| Priority date | — |
| Expiry date | Mar 7, 2015 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D10/40
Abstract
A semiconductor device comprises a semiconductor substrate having a main surface, a first semiconductor region of a first conductive type, formed on the main surface of the semiconductor substrate, a surrounding of the first semiconductor region is buried with a first insulation film, a second semiconductor region of a second conductive type, formed on the first insulation film and the first semiconductor region, a second insulation film, formed on the second semiconductor region, an end portion of the second insulation film is positioned above the first insulation film, and having an opening at a central portion thereof to be positioned above the first semiconductor region, and a third semiconductor region of a first conductivity type formed on a surface of the second semiconductor region exposed through the opening of the second insulation film.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.