Trimmable capacitor
US5604658A · kind A · utility
14Cited by
2References
7Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Jul 12, 1995 |
| Grant date | Feb 18, 1997 |
| Priority date | — |
| Expiry date | Jul 12, 2015 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D1/68
Abstract
In a multilayer metallisation/dielectric structure on a silicon substrate a trimmable capacitor is formed between two of the higher metallisation layers, with one layer being segmented and the individual segments connected by way of one or more vias and respective narrow links to one terminal of the capacitor. The narrow links are formed from titanium tungsten on the oxide isolated silicon substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.