Method for forming low refractive index film comprising silicon dioxide
US5605609A · kind A · utility
43Cited by
12References
1Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Oct 17, 1994 |
| Grant date | Feb 25, 1997 |
| Priority date | — |
| Expiry date | Oct 17, 2014 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02T10/90
- WIPO fieldMaterials, metallurgy
- WIPO sectorChemistry
Abstract
The present invention relates to a film comprising silicon dioxide as the main component, which contains Zr, etc., and a method for forming it by reactive DC sputtering. It makes it possible to form reflection preventive films, alkali barrier films and various multi-layered films such as multi-layered films for anti-iridescent glass, which contain said film comprising silicon dioxide as the main component, by a physical vapor deposition method without breaking a vacuum.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.