Pattern transfer techniques for fabrication of lenslet arrays for solid state imagers
US5605783A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Jan 6, 1995 |
| Grant date | Feb 25, 1997 |
| Priority date | — |
| Expiry date | Jan 6, 2015 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG02B2006/12176
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A method for forming lenslets which collect light and focuses it onto photosensitive elements of an electronic imager includes providing a transparent lenslet-forming layer on a substrate or on layers on the substrate and forming a thin etch-stop layer on the transparent lenslet-forming layer and patterning the etch-stop layer so that the mask pattern corresponds to lenslets to be formed, The method further includes anisotropically plasma etching the transparent lenslet-forming layer according to the thin etch-stop mask pattern, removing the thin etch-stop mask, and thermally reflowing the patterned transparent layer to form the transparent lenslets.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.