Strained quantum well structure having variable polarization dependence and optical device including the strained quantum well structure
US5606176A · kind A · utility
Assignee
Inventor
Key dates
| Filing date | Sep 26, 1994 |
| Grant date | Feb 25, 1997 |
| Priority date | — |
| Expiry date | Sep 26, 2014 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S5/3408
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A strained quantum well structure comprises a substrate, and a strained quantum well. The strained quantum well has at least one well layer and a plurality of barrier layers. The well layer is sandwiched by the barrier layers. At least a portion of the well layer and the barrier layers is composed of semiconductor crystal whose amount of strain is distributed, and the band structure of the quantum well is constructed so that the transition in the quantum well layer can be exchanged between states in which first polarization-state, typically transverse electric, transition is dominant and in which second polarization-state, typically transverse magnetic, transition is dominant.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.