Heterostructure field effect device having refractory ohmic contact directly on channel layer and method for making

US5606184A · kind A · utility

Assignee

• Motorola, Inc. · US

Inventors

• Jonathan K. Abrokwah · Tempe, US
• Jenn Hwa Huang · Chandler, US
• William J. Ooms · Chandler, US
• Carl L. Shurboff · Grayslake, US
• Jerald A. Hallmark · Gilbert, US

Key dates

• Filing date: May 4, 1995
• Grant date: Feb 25, 1997
• Expiry date: May 4, 2015

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D84/82
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

A complementary III-V heterostructure field effect device includes the same refractory ohmic material for providing the contacts (117, 119), to both the N-type and P-type devices. Furthermore, the refractory ohmic contacts (117, 119) directly contact the InGaAs channel layer (16) to provide improved ohmic contact, despite the fact that the structure incorporates an advantageous high aluminum composition barrier layer (18) and an advantageous GaAs cap layer (20).