Semiconductor integrated circuit including opposed substrates of different semiconductor materials and method of manufacturing the semiconductor integrated circuit
US5606186A · kind A · utility
63Cited by
6References
13Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Aug 9, 1995 |
| Grant date | Feb 25, 1997 |
| Priority date | — |
| Expiry date | Aug 9, 2015 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D88/00
Abstract
An insulating film having a through hole aligned with an electrode on a first semiconductor element is formed on a first semiconductor substrate and a metal is disposed in the through hole. A second semiconductor element on a second semiconductor substrate is placed on the insulating film in such a way that an electrode of the second semiconductor element contacts the metal. Thus, a plurality of transistors having different performance characteristics and functions can be easily disposed adjacent to each other for improved integration.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.