Charge coupled device gate structure having narrow effective gaps between gate electrodes

US5606187A · kind A · utility

Assignee

• NORTHROP GRUMMAN CORPORATION · US

Inventors

• Nathan Bluzer · Rockville, US
• James Halvis · Severna Park, US

Key dates

• Filing date: Jun 19, 1995
• Grant date: Feb 25, 1997
• Expiry date: Jun 19, 2015

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10F39/15

Abstract

A CCD structure including high resolution pixels. The gate electrodes of the CCD are separated by gaps in the order of 0.6 .mu.m which are made to look smaller than their physical size by the use of dielectric filler material in the gaps. The dielectric filler material has a relatively high dielectric constant which is relatively large for the clock frequencies utilized but may be relatively low for optical frequencies. The dielectric constant of the dielectric filler material is typically greater than 20 and is selected from materials such as tantalum oxide, zirconium oxide, barium titanate and barium strontium titanate.