Microelectronic circuit structure having improved structural fineness and method for manufacturing same

US5606190A · kind A · utility

Assignee

• Siemens Aktiengesellschaft · DE

Inventors

• Karl Robert Hofmann · Netphen, DE
• Maximilian Schultz · Radebeul, DE

Key dates

• Filing date: May 19, 1994
• Grant date: Feb 25, 1997
• Expiry date: May 19, 2014

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D64/511
• WIPO field: Micro-structural and nano-technology
• WIPO sector: Chemistry

Abstract

A microelectronic circuit structure has a semiconductor layer and a dielectric layer that are arranged neighboring one another. The dielectric layer comprises a charge distribution localized close to the boundary surface to the semiconductor layer which effects a shift of the local semiconductor surface potential in the semiconductor layer. The charge distribution, in particular, is non-uniform in the plane parallel to the boundary surface to the semiconductor layer so that the shift of the local semiconductor surface potential is effected in a limited region. Structures having dimensions down to 10 nm can thereby be produced by driving charge carriers into the dielectric layer in the electrical field between a pointed metal tip and the semiconductor layer.