High-voltage bipolar transistor utilizing field-terminated bond-pad electrodes
US5606195A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Dec 26, 1995 |
| Grant date | Feb 25, 1997 |
| Priority date | — |
| Expiry date | Dec 26, 2015 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/3025
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A high-voltage bipolar transistor and fabrication method that comprises a shield electrode (or field-termination electrode) located between bond pads and underlying semiconductor material. The shield electrode is sandwiched between two isolating dielectric layers. High-voltage applied to the bond pad establishes an electric field between the bond pad and the shield electrode), preventing field penetration into and inversion of the underlying semiconductor material. Using this overlapping field-termination structure, low leakage current and high breakdown voltage is maintained in the transistor. The present overlapping field-termination structure provides an effective field termination underneath the bond pads, and because of its overlapping design, provides for a more compact transistor.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.