Reduction of residual potential and ghosting in a photoconductor
US5606398A · kind A · utility
Assignee
Inventor
Key dates
| Filing date | Apr 28, 1995 |
| Grant date | Feb 25, 1997 |
| Priority date | — |
| Expiry date | Apr 28, 2015 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03G21/0094
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A system and method for reducing residual electrostatic potential and ghosting in a photoconductor alleviates the problems of low optical density and ghosting. A charge is applied to a surface of the photoconductor, and the photoconductor is exposed to conditioning radiation having wavelengths selected to release charge carriers from trap sites within the photoconductor. The applied charge establishes an electric field across the photoconductor. The released charge carriers are transported within the photoconductor under influence of the electric field to reduce residual electrostatic potential in the photoconductor. The resulting reduction in residual electrostatic potential increases optical density and eliminates ghosting problems. The system and method can be applied to existing electrophotography machines, and can be realized, at least in part, by adaptation of existing hardware present in such machines, thereby adding very little complexity, cost, size, or power consumption.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.