Method of forming thin film on substrate by reactive DC sputtering
US5607559A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Feb 21, 1995 |
| Grant date | Mar 4, 1997 |
| Priority date | — |
| Expiry date | Feb 21, 2015 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC23C14/34
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A method of forming a metal oxide film on a substrate by a reactive DC sputtering device with introducing thereinto a reaction gas and an inert gas includes the steps of: (a) regulating a flow rate ratio or a pressure ratio of the reaction gas to the inert gas to not higher than 0.4; (b) increasing a power input to the sputtering device to a first predetermined value such that a discharge voltage increases to a maximum value and then decreases from the maximum value; and (c) decreasing the power input from the first predetermined value to a second predetermined value immediately after the discharge voltage starts to decrease from the maximum value so as to suppress a metal formation on the substrate, the steps (b) and (c) being alternately repeated for a certain period for completing the metal oxide formation on the substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.