Method of forming single-crystalline thin film
US5607899A · kind A · utility
Assignees
Inventors
Key dates
| Filing date | Feb 24, 1995 |
| Grant date | Mar 4, 1997 |
| Priority date | — |
| Expiry date | Feb 24, 2015 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S505/732
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A thin film strongly orienting specific crystal axes is deposited on a polycrystalline or amorphous base material in accordance with laser deposition in a simpler device through a simpler process. A target is irradiated with a laser beam, for forming a thin film in accordance with laser ablation of depositing a substance scattered from the target on a base material. In order to form the thin film, prepared are conditions capable of forming a film orienting a specific crystal axis substantially perpendicularly to the base material in substantially parallel arrangement of the target and the base material. Under the conditions, a film is deposited on the base material which is inclined at a prescribed angle .theta. with respect to the target. It is possible to deposit a film strongly orienting a specific crystal axis in a plane substantially parallel to the base material surface by inclining the base material under the specific film forming conditions.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.