Field effect transistor having channel with plural quantum boxes arranged in a common plane
US5608231A · kind A · utility
43Cited by
2References
8Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jul 18, 1996 |
| Grant date | Mar 4, 1997 |
| Priority date | — |
| Expiry date | Jul 18, 2016 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/814
- WIPO fieldMicro-structural and nano-technology
- WIPO sectorChemistry
Abstract
A field effect transistor has a quantum dot array in its channel region. The quantum dot array is composed of a plurality of quantum dots arranged adjacent to each other on a common plane. Each quantum dot may be made of heterojunction of compound semiconductors or junction of a semiconductor and an insulator. The field effect transistor has a differential negative resistance.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.