Laser diode and process for producing the same
US5608751A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Mar 14, 1994 |
| Grant date | Mar 4, 1997 |
| Priority date | — |
| Expiry date | Mar 14, 2014 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S5/32325
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
The disclosure describes a laser diode comprising a Group III-V compound single-crystal substrate of first conduction type; a first cladding layer of first conduction type composed of (Al.sub.m Ga.sub.1-m).sub.n In.sub.1-n P (0.3.ltoreq.m.ltoreq.1 and 0.3.ltoreq.n.ltoreq.0.75) and formed on said single-crystal substrate; an active layer composed of (Al.sub.x Ga.sub.1-x).sub.y In.sub.1-y P (0.ltoreq.x.ltoreq.0.5 and 0.3.ltoreq.y.ltoreq.0.75) and formed on said first cladding layer; a second cladding layer of second conduction type composed of (Al.sub.m Ga.sub.1-m).sub.n In.sub.1-n P (0.3.ltoreq.m.ltoreq.1 and 0.3.ltoreq.n.ltoreq.0.75) and formed on said active layer and having a ridge; and a current blocking layer composed of Al.sub.u Ga.sub.1-u As.sub.v P.sub.1-v, (0.ltoreq.u.ltoreq.1 and 0.ltoreq.v.ltoreq.1) and so formed as to contact the lateral side of the ridge of said second cladding layer, (1) each refractive index of the first and second cladding layers being smaller than that of the active layer and (2) the refractive index of the current blocking layer being smaller than that of the second cladding layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.