Semiconductor laser device and method of designing the same
US5608752A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Apr 28, 1995 |
| Grant date | Mar 4, 1997 |
| Priority date | — |
| Expiry date | Apr 28, 2015 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S5/0658
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
In a semiconductor laser device comprising an n-type cladding layer, an active layer formed on the cladding layer, a p-type cladding layer formed on the active layer, and a p-type saturable light absorbing layer provided in the p-type cladding layer, the current confinement width for confining current injected into the active layer being W, the thickness d.sub.a of the active layer, the optical confinement factor .GAMMA..sub.a of the active layer, the thickness d.sub.s of the saturable light absorbing layer, the optical confinement factor .GAMMA..sub.s of the saturable light absorbing layer, and the light spot size S on a facet of the semiconductor laser device are so set as to satisfy a predetermined relationship. The reflectivity on a light output facet is set in the range of 10 to 20%.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.