Semiconductor light emitting device with depletion layer
US5610412A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Oct 19, 1995 |
| Grant date | Mar 11, 1997 |
| Priority date | — |
| Expiry date | Oct 19, 2015 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H29/10
Abstract
A semiconductor device having superior light output efficiency is disclosed. A p-Si diffusion layer is formed on a Si substrate and an n-Si diffusion layer is formed in the p-Si diffusion layer. An n-GaAs layer constituting an active region for emitting light is grown on the p-Si diffusion layer and the n-Si diffusion layer of the Si substrate and a p-GaAs layer constituting an active region for emitting light is grown on the n-GaAs layer. An upper electrode is disposed on an upper surface of the p-GaAs layer above the p-Si diffusion layer. Current is injected from the upper electrode through a region of the pn junction between the n-GaAs layer and the p-GaAs layer other than that directly below the upper electrode, and light is emitted from this region. The emitted light passes through the p-GaAs layer to outside the device without passing through and being attenuated by the upper electrode.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.