Semiconductor device having an electrode which controls a surface state of the base area for minimizing a change of the D.C. amplification ratio
US5610435A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Jun 18, 1996 |
| Grant date | Mar 11, 1997 |
| Priority date | — |
| Expiry date | Jun 18, 2016 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/165
Abstract
A bipolar transistor having a control electrode area of a semiconductor of a first conductive type, and first and second main electrode areas positioned in contact with the control electrode area and composed of a semiconductor of a second conductive type different from the first conductive type, comprises, for the purpose of preventing depletion of the surface of the control electrode area and suppressing or annulating the current generated in the surfacial depletion area, an electrode for controlling the surface state of the control electrode area, positioned, across an insulation film, on the surface of the control electrode area including the vicinity of the junction between the control electrode area and the above-mentioned first main electrode area.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.