Heterojunction type semiconductor device having ordered phase alloy layers for active and cladding layers
US5612550A · kind A · utility
2Cited by
3References
12Claims
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Key dates
| Filing date | Feb 24, 1995 |
| Grant date | Mar 18, 1997 |
| Priority date | — |
| Expiry date | Feb 24, 2015 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/817
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A heterojunction semiconductor device has a plurality of ordered phase alloy layers. Either the whole or a part of each of the ordered phase alloy layers has a crystal structure (triple-period structure) in which the ordered alloy is of a composition corresponding to the [111]A direction and an anion composition modulation period that is triple that of a disordered structure. The double-period structure may alternatively be used. The triple-period or double-period structure applied to the layer structure of the heterostructure semiconductor device results in a reduction of the bandgap.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.