Method for the formation of a silica-based coating film
US5614271A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Aug 5, 1996 |
| Grant date | Mar 25, 1997 |
| Priority date | — |
| Expiry date | Aug 5, 2016 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02282
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
Proposed is an improved method for the formation of a silica-based coating film on the surface of a substrate such as a silicon wafer in the manufacture of semiconductor devices by coating the substrate surface with a polysilazane-containing coating solution followed by conversion of the coating layer of polysilazane into a silica-based coating film. The method comprises drying the coating layer of the polysilazane according to a heating schedule at a specified heating rate with continuous or stepwise increase of the temperature up to 240.degree. to 350.degree. C. followed by an irradiation treatment with far ultraviolet light at a temperature of 240.degree. to 350.degree. C. and then by a baking treatment at 350.degree. to 800.degree. C.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.