Quantum dot fabrication process using strained epitaxial growth
US5614435A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Oct 27, 1994 |
| Grant date | Mar 25, 1997 |
| Priority date | — |
| Expiry date | Oct 27, 2014 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/962
- WIPO fieldMicro-structural and nano-technology
- WIPO sectorChemistry
Abstract
A process for production of self-assembled quantum dots is described which does not entail any processing steps before or after growth of the quantum dots. The process uses in situ formation of three dimensional islands which occurs during epitaxy of material with a different lattice parameter than the substrate. Further deposition of the substrate material then produces single or multiple buried two dimensional layers of randomly distributed or selectively positioned and substantially uniform sized quantum dots. These layers are free of defects and interface states. The lateral dot diameters vary between 140 to 300 Angstroms by appropriate choice of deposition parameters.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.