Multiple quantum well distributed feedback semiconductor laser device and method for fabricating the same
US5614436A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Mar 8, 1995 |
| Grant date | Mar 25, 1997 |
| Priority date | — |
| Expiry date | Mar 8, 2015 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S148/095
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A distributed feedback semiconductor laser device having a semiconductor substrate, a bottom electrode formed on a bottom surface of the substrate, a corrugation-shaped grating formed on a top surface of the substrate, an active waveguide layer whose energy band gap profile and whose light propagation constant are varied along cavity length direction of the laser device, the active waveguide layer being formed over the corrugation-shaped grating, a clad layer formed to cover the active waveguide layer, and a top electrode formed on a top of the clad layer. The active waveguide layer is grown by a selective metal organic vapor phase epitaxy with use of slender insulation masks having a variation in width, the slender insulation masks being arranged at both sides of an area on which the active waveguide layer is grown.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.