Gallium phosphate light emitting diode with zinc-doped contact

US5614736A · kind A · utility

Assignee

• Siemens Aktiengesellschaft · DE

Inventors

• Gerald Neumann · Regensburg, DE
• Ernst Nirschl · Wenzenbach, DE
• Werner Spaeth · Holzkirchen, DE

Key dates

• Filing date: Sep 25, 1995
• Grant date: Mar 25, 1997
• Expiry date: Sep 25, 2015

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10H20/831

Abstract

A light emitting diode includes a doped semiconductor substrate wafer with a layer sequence suitable for light emission in the green spectral range epitaxially applied thereon. A zinc-doped contact is applied to the p-conductive side of the wafer for efficient generation of pure green light emissions. An electrically conductive layer is provided between the zinc-doped contact and the p-conductive wafer side to suppress diffusion of oxygen into the p-conductive wafer side during diode manufacture.