High voltage Shottky diode

US5614755A · kind A · utility

Assignee

• TEXAS INSTRUMENTS INCORPORATED · US

Inventors

• Louis N. Hutter · Richardson, US
• Marco Corsi · Little Elm, US

Key dates

• Filing date: Apr 30, 1993
• Grant date: Mar 25, 1997
• Expiry date: Apr 30, 2013

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D84/401

Abstract

A high operating voltage bipolar transistor (42) includes a base including a first region (52) of a lightly doped layer (44) of semiconductor material of a first conductivity type. The transistor (42) also includes a collector including a buried layer (50) and a collector region (48). The lightly doped layer (44) is formed over the buried layer (50) and the collector region (48) extends through the lightly doped layer (44) and contacts the buried layer (50). The transistor (42) also includes an emitter formed in the base. The transistor (42) provides a high operating voltage without requiring an increased thickness epitaxial layer or additional processing steps. A high Hfe transistor and high voltage Schottky diode are also described.