Semiconductor device having an MIS structure
US5616947A · kind A · utility
536Cited by
2References
6Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | May 31, 1996 |
| Grant date | Apr 1, 1997 |
| Priority date | — |
| Expiry date | May 31, 2016 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/85
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device including a GaAs semiconductor substrate, an insulating layer which is made of material selected from the group MgS, MgSSe and CaZnS and is formed on the GaAs substrate, and a conductive electrode formed on the insulating layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.