Non-volatile, bidirectional, electrically programmable integrated memory element implemented using double polysilicon

US5617352A · kind A · utility

Assignee

• United States of America as represented by the Secretary of the Air Force · US

Inventor

• Patrick A. Shoemaker · Lemon Grove, US

Key dates

• Filing date: Dec 13, 1995
• Grant date: Apr 1, 1997
• Expiry date: Dec 13, 2015

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10B69/00

Abstract

A non-volatile, bidirectional electrically programmable integrated memory ement is describe which includes a dielectric structure supported by a substrate and a programming terminal supported by the dielectric structure. The programming terminal includes: (1) a first polysilicon structure; a second polysilicon structure; and an electrically conductive first interconnect which electrically connects the first polysilicon structure to the second polysilicon structure; (2) a floating gate structure supported by the dielectric structure which includes: (a) a third polysilicon structure which overlies and is separated from a section of the first polysilicon structure by the dielectric structure; (b) a fourth polysilicon structure which is overlain and separated from a section of the second polysilicon structure by the dielectric structure; and (c) an electrically conductive second interconnect which electrically couples the third polysilicon structure to the fourth polysilicon structure. The memory element also includes a capacitor electrically connected to the second interconnect.