Method of producing self-supporting thin film of silicon single crystal
US5618345A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Mar 14, 1995 |
| Grant date | Apr 8, 1997 |
| Priority date | — |
| Expiry date | Mar 14, 2015 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/977
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A self-supporting thin film of silicon single crystal is produced essentially by the steps of implanting boron ions in a silicon single crystal substrate from one major surface thereof to form a high impurity concentration layer having a high boron concentration in the substrate; heating the silicon single crystal substrate formed with the high impurity concentration layer in an atmosphere containing oxygen to form an oxide film on the surface of the single crystal substrate and make the high impurity concentration layer resistant to etching; masking all of the oxide film surface other than that at the center region on the surface opposite from that implanted with boron ions and then exposing the high impurity concentration layer by high-speed mask etching followed by selective etching; and removing the oxide film.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.