Process for producing silicon carbide material
US5618510A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Apr 10, 1995 |
| Grant date | Apr 8, 1997 |
| Priority date | — |
| Expiry date | Apr 10, 2015 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC04B35/573
- WIPO fieldMaterials, metallurgy
- WIPO sectorChemistry
Abstract
A silicon carbide material in the form of fibers, sheets or three-dimensionally structured articles useful as a reinforcing material and heat-insulating material, is produced by reacting an activated porous carbon material in the form of, for example, fibers, sheets or three-dimensionally structured articles, and having a specific surface area of 100 to 2500 m.sup.2 /g, with silicon monoxide gas at a temperature of 800.degree. C. to 2000.degree. C. and then heat-treating the resultant silicon carbide material in a non-oxidative gas atmosphere containing nitrogen and substantially no oxygen at a temperature of 800.degree. C. to 2000.degree. C.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.