Process for the vapor deposition of a metal nitride-based layer on a transparent substrate
US5618579A · kind A · utility
30Cited by
5References
27Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Aug 12, 1994 |
| Grant date | Apr 8, 1997 |
| Priority date | — |
| Expiry date | Aug 12, 2014 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC03C2218/152
- WIPO fieldMaterials, metallurgy
- WIPO sectorChemistry
Abstract
A metal nitride or oxynitride layer is pyrolytically deposited onto a transparent substrate by a process consisting of simultaneously bringing into contact at least one metal precursor and at least one amine as a nitrogen precursor into contact with said substrate which is heated for a high temperature.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.