Semiconductor laser diode
US5619518A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Dec 23, 1994 |
| Grant date | Apr 8, 1997 |
| Priority date | — |
| Expiry date | Dec 23, 2014 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S5/3216
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
The disclosure described a semiconductor laser diode comprising at least a first clad layer, an active layer and a second clad layer disposed in this order on the substrate, and a buried layer for current blocking disposed at both sides in the cavity direction of the active layer, at least one of the first clad layer and second clad layer having at least one superlattice in the direction parallel with the substrate, and the average refractive index (nc1) of the first clad layer, the refractive index (na) of the active layer and the average refractive index (nc2) of the second clad layer satisfying the following equations. EQU na>nc1 (1) EQU na>nc2 (2)
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.