In-situ cleaning of plasma treatment chamber
US5620526A · kind A · utility
31Cited by
7References
10Claims
0Family size
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Key dates
| Filing date | Jul 22, 1994 |
| Grant date | Apr 15, 1997 |
| Priority date | — |
| Expiry date | Jul 22, 2014 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC23C16/4405
- WIPO fieldBasic materials chemistry
- WIPO sectorChemistry
Abstract
A cleaning of a plasma chamber is done by a NF.sub.3 plasma treatment (typically under 1 to 1.5 Torr). The etching rate of an oxide layer can be improved by inserting, between the NF.sub.3 plasma treatments, a low pressure (lower than 10.sup.-1 Torr) plasma treatment preferably in a plasma of oxygen, water vapor, silane, fluorine, a hydrate compound, nitrogen trifluoride, or a mixture of nitrogen trifluoride with at least one of hydrogen fluoride, fluorine, water vapor and hydride compounds.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.