Hydrogen radical processing
US5620559A · kind A · utility
Assignee
Inventor
Key dates
| Filing date | Mar 15, 1995 |
| Grant date | Apr 15, 1997 |
| Priority date | — |
| Expiry date | Mar 15, 2015 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/31116
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of manufacturing a semiconductor device. The method includes the application of a gas containing HF vapor and H.sub.2 O or alcohol vapor to a substrate. An excitation energy is applied to a flow of gas containing hydrogen to generate a plasma. Gas containing nitrogen fluoride is added to the gas containing hydrogen at a first position which is downstream from the place where the plasma is generated and at which the concentration of high energy particles in the gas containing hydrogen is negligible. The HF treated substrate is exposed to the gas containing nitrogen fluoride at a second position which is further downstream than the first position where the nitrogen fluoride is added.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.